Measurement of Silicon Crystals Irradiated
نویسنده
چکیده
30 Si(n,ƒÁ)31Si2.62h +31P+ƒÀ(1) Irradiated silicon crystals are heavily damaged and electrical resistivity changes drastically. The lattice damage can be removed by an appropriate annealing. The change in resistivity of the silicon crystals is quite complex. It depends on both impurity atoms contained originally in silicon and atoms produced by nuclear reactions. This note describes the determination of impurities originally contained in FZ and CZ silicon crystals by means of neutron activation analysis and the measurement of change in resistivity of irradiated and/or annealed silicon crystals. 2. Experimental An investigation was made of silicon crystals with oxygen concentrations known by infrared
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